Infineon HEXFET Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 2 units)*

PHP288.04

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PHP322.60

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP144.02PHP288.04
10 - 38PHP139.70PHP279.40
40 - 98PHP135.505PHP271.01
100 - 198PHP131.44PHP262.88
200 +PHP127.495PHP254.99

*price indicative

RS Stock No.:
688-6914
Mfr. Part No.:
IRFB3307ZPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

79nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

230W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

10.66mm

Standards/Approvals

No

Width

4.82 mm

Height

9.02mm

Automotive Standard

No

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