Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-220

RS Stock No.:: 688-6923
Mfr. Part No.:: IRFB3607PBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-220

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Bulk discount available

Subtotal (1 pack of 5 units)*

PHP401.83

(exc. VAT)

PHP450.05

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

45 unit(s) ready to ship from another location
Plus 425 unit(s) shipping from January 01, 2026

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Units	Per Unit	Per Pack*
5 - 20	PHP80.366	PHP401.83
25 +	PHP77.954	PHP389.77

*price indicative

RS Stock No.:: 688-6923
Mfr. Part No.:: IRFB3607PBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	75V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	9mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	140W
	Typical Gate Charge Qg @ Vgs	56nC
	Maximum Operating Temperature	175°C
	Width	4.82 mm
	Height	9.02mm
	Length	10.66mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 75V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 9mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 140W
	Typical Gate Charge Qg @ Vgs 56nC
	Maximum Operating Temperature 175°C
	Width 4.82 mm
	Height 9.02mm
	Length 10.66mm
	Standards/Approvals No
	Automotive Standard No

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