onsemi PowerTrench Dual N/P-Channel-Channel MOSFET, 6.5 A, 9 A, 40 V, 5-Pin DPAK FDD8424H
- RS Stock No.:
- 671-0356
- Mfr. Part No.:
- FDD8424H
- Manufacturer:
- onsemi
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 671-0356
- Mfr. Part No.:
- FDD8424H
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 6.5 A, 9 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | PowerTrench | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 24 mΩ, 54 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 3.1 W | |
| Transistor Configuration | Common Drain | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.73mm | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V, 17 nC @ 10 V | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 6.5 A, 9 A | ||
Maximum Drain Source Voltage 40 V | ||
Series PowerTrench | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 24 mΩ, 54 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 3.1 W | ||
Transistor Configuration Common Drain | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.73mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V, 17 nC @ 10 V | ||
Width 6.22mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench Dual N/P-Channel MOSFET 6.2 A 8-Pin SOIC FDS4897C
- onsemi PowerTrench Dual N-Channel MOSFET 30 V, 6-Pin SOT-363 FDG8850NZ
- onsemi PowerTrench Dual N-Channel MOSFET 20 V, 6-Pin SOT-363 FDG1024NZ
- onsemi PowerTrench Dual N-Channel MOSFET 30 V, 8-Pin SOIC FDS6930B
- onsemi PowerTrench Dual N-Channel MOSFET 20 V, 6-Pin SC-89-6 FDY3000NZ
- ROHM Dual N/P-Channel MOSFET 7 A 8-Pin SOP SH8MC5TB1
- Infineon HEXFET Dual N/P-Channel-Channel MOSFET 6.6 A 8-Pin SOIC IRF7317TRPBF
- ROHM SH8MA4 Dual N/P-Channel MOSFET 30 V, 8-Pin SOP SH8MA4TB1
