onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

PHP73,461.00

(exc. VAT)

PHP82,275.00

(inc. VAT)

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3000 +PHP24.487PHP73,461.00

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RS Stock No.:
124-1358
Mfr. Part No.:
FDC6327C
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

2.7A

Maximum Drain Source Voltage Vds

20V

Series

PowerTrench

Package Type

SOT-23

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

270mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3.25nC

Maximum Power Dissipation Pd

960mW

Maximum Gate Source Voltage Vgs

8 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.76V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Length

3mm

Width

1.7 mm

Height

1mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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