onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 340 mA, 60 V Enhancement, 6-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

PHP23,370.00

(exc. VAT)

PHP26,160.00

(inc. VAT)

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3000 +PHP7.79PHP23,370.00

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RS Stock No.:
166-2806
Mfr. Part No.:
NDC7003P
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

340mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

PowerTrench

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.6nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

960mW

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-0.8V

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Length

3mm

Width

1.7 mm

Height

1mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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