onsemi Isolated PowerTrench 2 Type P-Channel Power MOSFET, 2.6 A, 20 V Enhancement, 6-Pin MicroFET Thin FDME1023PZT
- RS Stock No.:
- 759-9572
- Mfr. Part No.:
- FDME1023PZT
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP137.81
(exc. VAT)
PHP154.345
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 4,285 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP27.562 | PHP137.81 |
| 25 - 45 | PHP26.938 | PHP134.69 |
| 50 - 245 | PHP26.158 | PHP130.79 |
| 250 - 495 | PHP25.534 | PHP127.67 |
| 500 + | PHP24.91 | PHP124.55 |
*price indicative
- RS Stock No.:
- 759-9572
- Mfr. Part No.:
- FDME1023PZT
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | PowerTrench | |
| Package Type | MicroFET Thin | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 142mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.4W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Length | 1.6mm | |
| Standards/Approvals | RoHS | |
| Width | 1.6 mm | |
| Height | 0.5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series PowerTrench | ||
Package Type MicroFET Thin | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 142mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.4W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Length 1.6mm | ||
Standards/Approvals RoHS | ||
Width 1.6 mm | ||
Height 0.5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi Isolated PowerTrench 2 Type P-Channel Power MOSFET 20 V Enhancement, 6-Pin MicroFET Thin
- onsemi Isolated PowerTrench 2 Type N 3.8 A 6-Pin MicroFET
- onsemi Isolated PowerTrench 2 Type N 3.8 A 6-Pin MicroFET FDME1034CZT
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin MicroFET
- onsemi Isolated PowerTrench 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin MicroFET FDME1024NZT
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 30 V Enhancement, 6-Pin MLP
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 20 V Enhancement, 6-Pin MLP
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 20 V Enhancement, 6-Pin SOT-23