onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 3.8 A, 20 V Enhancement, 6-Pin MicroFET

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Subtotal (1 reel of 5000 units)*

PHP121,805.00

(exc. VAT)

PHP136,420.00

(inc. VAT)

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Units
Per Unit
Per Reel*
5000 +PHP24.361PHP121,805.00

*price indicative

RS Stock No.:
166-2713
Mfr. Part No.:
FDME1024NZT
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.8A

Maximum Drain Source Voltage Vds

20V

Series

PowerTrench

Package Type

MicroFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

160mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.7V

Maximum Gate Source Voltage Vgs

8 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3nC

Maximum Power Dissipation Pd

1.4W

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Length

1.6mm

Height

0.5mm

Width

1.6 mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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