onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin SOT-23 FDC6333C

RS Stock No.:: 739-0164
Mfr. Part No.:: FDC6333C
Manufacturer:: onsemi

onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin SOT-23 FDC6333C

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

PHP137.27

(exc. VAT)

PHP153.74

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

10 unit(s) ready to ship from another location
Plus 1,720 unit(s) shipping from January 01, 2026

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Units	Per Unit	Per Pack*
5 - 20	PHP27.454	PHP137.27
25 - 95	PHP26.628	PHP133.14
100 - 245	PHP25.83	PHP129.15
250 - 495	PHP25.054	PHP125.27
500 +	PHP24.304	PHP121.52

*price indicative

RS Stock No.:: 739-0164
Mfr. Part No.:: FDC6333C
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type P, Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.5A
	Maximum Drain Source Voltage Vds	30V
	Series	PowerTrench
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	220mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	4.7nC
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	960mW
	Forward Voltage Vf	0.8V
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3mm
	Width	1.7 mm
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type P, Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.5A
	Maximum Drain Source Voltage Vds 30V
	Series PowerTrench
	Package Type SOT-23
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 220mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 4.7nC
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 960mW
	Forward Voltage Vf 0.8V
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3mm
	Width 1.7 mm
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin SOT-23 FDC6333C

FREE delivery for orders over ₱3,000.00

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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