onsemi Isolated PowerTrench 2 Type N, Type N, Type P, Type P-Channel MOSFET, 6.2 A, 40 V Enhancement, 8-Pin SOIC

RS Stock No.:: 166-2595
Mfr. Part No.:: FDS4897C
Manufacturer:: onsemi

onsemi Isolated PowerTrench 2 Type N, Type N, Type P, Type P-Channel MOSFET, 6.2 A, 40 V Enhancement, 8-Pin SOIC

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RS Stock No.:: 166-2595
Mfr. Part No.:: FDS4897C
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Transistor Configuration	Isolated
	Series	PowerTrench
	Number of Elements per Chip	2
	Channel Type	Type N, Type N, Type P, Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current (Id)	6.2 A
	Maximum Drain Source Voltage (Vds)	40 V
	Channel Mode	Enhancement
	Pin Count	8
	Package Type	SOIC
	Automotive Standard	No
	Forward Voltage (Vf)	700 mV
	Height	1.5 mm
	Length	5 mm
	Maximum Drain Source Resistance (Rds)	63 mΩ
	Maximum Gate Source Voltage (Vgs)	-20 V, +20 V
	Maximum Operating Temperature	150 °C
	Maximum Power Dissipation (Pd)	2 W
	Minimum Operating Temperature	-55 °C
	Mount Type	Surface
	Standards/Approvals	RoHS Compliant
	Typical Gate Charge (Qg) @ Vgs	20 nC
	Width	4 mm

	Select all
	Brand onsemi
	Transistor Configuration Isolated
	Series PowerTrench
	Number of Elements per Chip 2
	Channel Type Type N, Type N, Type P, Type P
	Product Type MOSFET
	Maximum Continuous Drain Current (Id) 6.2 A
	Maximum Drain Source Voltage (Vds) 40 V
	Channel Mode Enhancement
	Pin Count 8
	Package Type SOIC
	Automotive Standard No
	Forward Voltage (Vf) 700 mV
	Height 1.5 mm
	Length 5 mm
	Maximum Drain Source Resistance (Rds) 63 mΩ
	Maximum Gate Source Voltage (Vgs) -20 V, +20 V
	Maximum Operating Temperature 150 °C
	Maximum Power Dissipation (Pd) 2 W
	Minimum Operating Temperature -55 °C
	Mount Type Surface
	Standards/Approvals RoHS Compliant
	Typical Gate Charge (Qg) @ Vgs 20 nC
	Width 4 mm

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type N, Type N, Type P, Type P-Channel MOSFET, 6.2 A, 40 V Enhancement, 8-Pin SOIC

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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