onsemi Isolated PowerTrench 2 Type N, Type P-Channel MOSFET, 6.2 A, 40 V Enhancement, 8-Pin SOIC FDS4897C

RS Stock No.:: 671-0539
Mfr. Part No.:: FDS4897C
Manufacturer:: onsemi

onsemi Isolated PowerTrench 2 Type N, Type P-Channel MOSFET, 6.2 A, 40 V Enhancement, 8-Pin SOIC FDS4897C

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

PHP362.60

(exc. VAT)

PHP406.10

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Last RS stock

Final 70 unit(s), ready to ship from another location

Units	Per Unit	Per Pack*
5 - 20	PHP72.52	PHP362.60
25 - 95	PHP64.49	PHP322.45
100 - 245	PHP54.17	PHP270.85
250 - 495	PHP53.53	PHP267.65
500 +	PHP52.89	PHP264.45

*price indicative

RS Stock No.:: 671-0539
Mfr. Part No.:: FDS4897C
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N, Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6.2A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOIC
	Series	PowerTrench
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	63mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	20nC
	Forward Voltage Vf	0.7V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Length	5mm
	Standards/Approvals	RoHS Compliant
	Width	4 mm
	Height	1.5mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N, Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6.2A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOIC
	Series PowerTrench
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 63mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 20nC
	Forward Voltage Vf 0.7V
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Length 5mm
	Standards/Approvals RoHS Compliant
	Width 4 mm
	Height 1.5mm
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type N, Type P-Channel MOSFET, 6.2 A, 40 V Enhancement, 8-Pin SOIC FDS4897C

FREE delivery for orders over ₱3,000.00

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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