Infineon HEXFET Type N-Channel MOSFET, 209 A, 75 V Enhancement, 3-Pin TO-247 IRFP2907PBF
- RS Stock No.:
- 543-1500
- Distrelec Article No.:
- 303-41-348
- Mfr. Part No.:
- IRFP2907PBF
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
PHP313.83
(exc. VAT)
PHP351.49
(inc. VAT)
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In Stock
- Plus 202 unit(s) shipping from December 29, 2025
- Plus 1,933 unit(s) shipping from January 05, 2026
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP313.83 |
| 10 - 49 | PHP307.56 |
| 50 - 99 | PHP301.41 |
| 100 - 499 | PHP295.38 |
| 500 + | PHP243.11 |
*price indicative
- RS Stock No.:
- 543-1500
- Distrelec Article No.:
- 303-41-348
- Mfr. Part No.:
- IRFP2907PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 209A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 470W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 410nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.9mm | |
| Height | 20.3mm | |
| Width | 5.3 mm | |
| Standards/Approvals | No | |
| Distrelec Product Id | 30341348 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 209A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 470W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 410nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.9mm | ||
Height 20.3mm | ||
Width 5.3 mm | ||
Standards/Approvals No | ||
Distrelec Product Id 30341348 | ||
Automotive Standard No | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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