STMicroelectronics STW65N N-Channel MOSFET, 54 A, 650 V Enhancement, 3-Pin TO-247-4 STW65N045M9-4
- RS Stock No.:
- 287-7053
- Mfr. Part No.:
- STW65N045M9-4
- Manufacturer:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
PHP17,387.37
(exc. VAT)
PHP19,473.84
(inc. VAT)
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In Stock
- 300 unit(s) ready to ship from another location
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Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 30 | PHP579.579 | PHP17,387.37 |
| 60 - 60 | PHP562.191 | PHP16,865.73 |
| 90 + | PHP545.326 | PHP16,359.78 |
*price indicative
- RS Stock No.:
- 287-7053
- Mfr. Part No.:
- STW65N045M9-4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STW65N | |
| Package Type | TO-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 312W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STW65N | ||
Package Type TO-247-4 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 312W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is based on the most innovative super junction MDmesh M9 technology. The silicon based M9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Higher dv/dt capability
Excellent switching performance
Easy to drive
100 percent avalanche tested
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