STMicroelectronics N-Channel STHU60 Type N-Channel MOSFET, 54 A, 600 V Enhancement, 7-Pin HU3PAK

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

PHP642.64

(exc. VAT)

PHP719.76

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 300 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
1 - 9PHP642.64
10 - 49PHP520.55
50 - 99PHP398.46
100 +PHP353.53

*price indicative

RS Stock No.:
481-132
Mfr. Part No.:
STHU60N046DM9AG
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

54A

Maximum Drain Source Voltage Vds

600V

Package Type

HU3PAK

Series

STHU60

Mount Type

Surface

Pin Count

7

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

N-Channel

Width

14.1 mm

Height

3.6mm

Standards/Approvals

AEC-Q101

Length

11.9mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
JP
The STMicroelectronics N-Channel Power MOSFET is based on Advanced super-junction MDmesh DM9 technology, designed for medium to high voltage applications. It features very low RDS(on) per area and an integrated fast-recovery diode. The DM9 technology uses a multi-drain manufacturing process to enhance device structure and performance. With low recovery charge (Qrr), fast recovery time (trr), and low RDS(on), this fast-switching MOSFET is Ideal for high-efficiency bridge topologies and ZVS phase-shift converters.

Low gate charge and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Excellent switching performance thanks to the extra driving source pin

AEC-Q101 qualified

Related links