STMicroelectronics SCT060HU Type N-Channel MOSFET, 30 A, 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG
- RS Stock No.:
- 152-111
- Mfr. Part No.:
- SCT060HU75G3AG
- Manufacturer:
- STMicroelectronics
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| 10 - 99 | PHP704.80 |
| 100 + | PHP649.72 |
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- RS Stock No.:
- 152-111
- Mfr. Part No.:
- SCT060HU75G3AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | HU3PAK | |
| Series | SCT060HU | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3V | |
| Maximum Gate Source Voltage Vgs | ±18 V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.6mm | |
| Length | 14.1mm | |
| Standards/Approvals | RoHS | |
| Width | 19 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type HU3PAK | ||
Series SCT060HU | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3V | ||
Maximum Gate Source Voltage Vgs ±18 V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Operating Temperature 175°C | ||
Height 3.6mm | ||
Length 14.1mm | ||
Standards/Approvals RoHS | ||
Width 19 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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