STMicroelectronics STH Type N-Channel MOSFET, 55 A, 30 V Enhancement, 7-Pin HU3PAK STHU32N65DM6AG
- RS Stock No.:
- 240-0609
- Mfr. Part No.:
- STHU32N65DM6AG
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP469.30
(exc. VAT)
PHP525.62
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 30 unit(s) shipping from December 26, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | PHP469.30 |
| 10 - 99 | PHP468.57 |
| 100 - 249 | PHP467.84 |
| 250 - 499 | PHP467.11 |
| 500 + | PHP466.39 |
*price indicative
- RS Stock No.:
- 240-0609
- Mfr. Part No.:
- STHU32N65DM6AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | HU3PAK | |
| Series | STH | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 320W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 52.6nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type HU3PAK | ||
Series STH | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 320W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 52.6nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
AEC-Q101 qualified
Fast-recovery body diode
Lower RDS(on) x area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely dv/dt ruggedness
Zener-protected
Related links
- STMicroelectronics STH Type N-Channel MOSFET 30 V Enhancement, 7-Pin HU3PAK
- STMicroelectronics N-Channel STHU60 Type N-Channel MOSFET 600 V Enhancement, 7-Pin HU3PAK
- STMicroelectronics SCT Type N-Channel Power MOSFET 1200 V Enhancement, 7-Pin HU3PAK
- STMicroelectronics SCT Type N-Channel Power MOSFET 1200 V Enhancement, 7-Pin HU3PAK SCT070HU120G3AG
- STMicroelectronics SCT060HU Type N-Channel MOSFET 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG
- STMicroelectronics N-Channel STHU60 Type N-Channel MOSFET 600 V Enhancement, 7-Pin HU3PAK STHU60N046DM9AG
- STMicroelectronics N-Channel STHU65 Type N-Channel MOSFET 650 V N, 7-Pin HU3PAK
- STMicroelectronics STHU36N Type N-Channel MOSFET 600 V, 7-Pin HU3PAK STHU36N60DM6AG