STMicroelectronics MASTERG Type N, Type P-Channel MOSFET, 9.7 A, 650 V Enhancement, 31-Pin QFN-9 MASTERGAN1LTR

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PHP497.44

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1 - 24PHP444.14
25 - 49PHP399.54
50 - 99PHP359.83
100 - 249PHP323.80
250 +PHP284.70

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Packaging Options:
RS Stock No.:
287-7041
Mfr. Part No.:
MASTERGAN1LTR
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

9.7A

Maximum Drain Source Voltage Vds

650V

Series

MASTERG

Package Type

QFN-9

Mount Type

Surface

Pin Count

31

Maximum Drain Source Resistance Rds

220mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

40mW

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

2nC

Maximum Operating Temperature

125°C

Width

9 mm

Length

9mm

Height

1mm

Standards/Approvals

RoHS, ECOPACK

Automotive Standard

No

COO (Country of Origin):
TH
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

Zero reverse recovery loss

UVLO protection on VCC

Internal bootstrap diode

Interlocking function

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