Vishay SISS N-Channel MOSFET, 66.6 A, 80 V Enhancement, 8-Pin 1212-8S SISS5808DN-T1-GE3

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Subtotal (1 pack of 4 units)*

PHP573.12

(exc. VAT)

PHP641.88

(inc. VAT)

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Units
Per Unit
Per Pack*
4 - 56PHP143.28PHP573.12
60 - 96PHP140.405PHP561.62
100 - 236PHP137.53PHP550.12
240 - 996PHP134.655PHP538.62
1000 +PHP131.78PHP527.12

*price indicative

Packaging Options:
RS Stock No.:
280-0003
Mfr. Part No.:
SISS5808DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

66.6A

Maximum Drain Source Voltage Vds

80V

Package Type

1212-8S

Series

SISS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00745Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

65.7W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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