Vishay SISS Type N-Channel MOSFET, 26.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3

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Subtotal (1 pack of 5 units)*

PHP586.04

(exc. VAT)

PHP656.365

(inc. VAT)

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Being discontinued
  • Final 6,000 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
5 - 45PHP117.208PHP586.04
50 - 95PHP113.694PHP568.47
100 - 245PHP106.87PHP534.35
250 - 995PHP97.25PHP486.25
1000 +PHP85.58PHP427.90

*price indicative

Packaging Options:
RS Stock No.:
268-8349
Mfr. Part No.:
SISS5710DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

26.2A

Maximum Drain Source Voltage Vds

150V

Package Type

PowerPAK 1212-8S

Series

SISS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0315Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

54.3W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.

Very low figure of merit

ROHS compliant

UIS tested 100 percent

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