Vishay SISS Type N-Channel MOSFET, 40.7 A, 100 V Enhancement, 8-Pin 1212-8S SISS5112DN-T1-GE3

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Subtotal (1 pack of 5 units)*

PHP478.24

(exc. VAT)

PHP535.63

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 45PHP95.648PHP478.24
50 - 95PHP81.316PHP406.58
100 - 245PHP72.298PHP361.49
250 - 995PHP70.848PHP354.24
1000 +PHP69.396PHP346.98

*price indicative

Packaging Options:
RS Stock No.:
279-9996
Mfr. Part No.:
SISS5112DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40.7A

Maximum Drain Source Voltage Vds

100V

Series

SISS

Package Type

1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0149Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

52W

Typical Gate Charge Qg @ Vgs

16nC

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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