Vishay SISS Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin 1212-8S SISS52DN-T1-UE3

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Subtotal (1 pack of 5 units)*

PHP362.60

(exc. VAT)

PHP406.10

(inc. VAT)

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  • 6,000 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
5 - 45PHP72.52PHP362.60
50 - 95PHP65.518PHP327.59
100 - 245PHP58.34PHP291.70
250 - 995PHP57.264PHP286.32
1000 +PHP56.184PHP280.92

*price indicative

Packaging Options:
RS Stock No.:
279-9999
Mfr. Part No.:
SISS52DN-T1-UE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

162A

Maximum Drain Source Voltage Vds

30V

Series

SISS

Package Type

1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0012Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

65nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

57W

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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