Vishay SISS Type N-Channel MOSFET, 55.9 A, 100 V Enhancement, 8-Pin 1212-8S SISS5110DN-T1-GE3

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 4 units)*

PHP425.832

(exc. VAT)

PHP476.932

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 6,000 unit(s) shipping from January 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
4 - 56PHP106.458PHP425.83
60 - 96PHP79.938PHP319.75
100 - 236PHP70.845PHP283.38
240 - 996PHP69.33PHP277.32
1000 +PHP67.813PHP271.25

*price indicative

Packaging Options:
RS Stock No.:
279-9994
Mfr. Part No.:
SISS5110DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55.9A

Maximum Drain Source Voltage Vds

100V

Series

SISS

Package Type

1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0126Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

20nC

Maximum Power Dissipation Pd

56.8W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

Related links