Vishay SiR Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SO-8 SIR638ADP-T1-UE3

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Subtotal (1 pack of 4 units)*

PHP534.692

(exc. VAT)

PHP598.856

(inc. VAT)

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Units
Per Unit
Per Pack*
4 - 56PHP133.673PHP534.69
60 - 96PHP131.225PHP524.90
100 - 236PHP128.778PHP515.11
240 - 996PHP126.33PHP505.32
1000 +PHP123.883PHP495.53

*price indicative

Packaging Options:
RS Stock No.:
279-9958
Mfr. Part No.:
SIR638ADP-T1-UE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00088Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

165nC

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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