Vishay SiR N channel-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SiR5102DP
- RS Stock No.:
- 735-165
- Mfr. Part No.:
- SiR5102DP
- Manufacturer:
- Vishay
N
Bulk discount available
Subtotal (1 unit)*
PHP265.33
(exc. VAT)
PHP297.17
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from June 14, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | PHP265.33 |
| 10 - 49 | PHP164.41 |
| 50 - 99 | PHP127.01 |
| 100 + | PHP86.12 |
*price indicative
- RS Stock No.:
- 735-165
- Mfr. Part No.:
- SiR5102DP
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiR | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0041Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 100V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 33.7nC | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Operating Temperature | 150°C | |
| Height | 2mm | |
| Length | 7mm | |
| Width | 6mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiR | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0041Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 100V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 33.7nC | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Operating Temperature 150°C | ||
Height 2mm | ||
Length 7mm | ||
Width 6mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications
94A continuous drain current at TA=25°C
54.3nC typical total gate charge for fast switching
-55°C to +175°C extended junction temperature range
Related links
- Vishay SiR N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK SO-8 SiR512DP
- Vishay SiR N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SiR638ADP
- Vishay SiR N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SiR626DP
- Vishay SiR N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK SO-8 SiR510DP
- Vishay SiR N channel-Channel MOSFET 25 V Enhancement, 8-Pin PowerPAK SO-8 SiRA20DDP
- Vishay SiR N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8 SiR500DP
- Vishay SiR N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK SO-8 SiR580DP
- Vishay SiR N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK SO-8S SiRS5100DP