Vishay SIR N channel-Channel Single MOSFETs, 125 A, 80 V Enhancement Mode, 8-Pin P SIR680ADP-T1-UE3

N
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Subtotal (1 unit)*

PHP184.49

(exc. VAT)

PHP206.63

(inc. VAT)

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  • Shipping from September 27, 2027
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Units
Per Unit
1 - 9PHP184.49
10 - 24PHP119.82
25 - 99PHP71.05
100 - 499PHP68.92
500 +PHP67.86

*price indicative

RS Stock No.:
829-343
Mfr. Part No.:
SIR680ADP-T1-UE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

125A

Maximum Drain Source Voltage Vds

80V

Package Type

P

Series

SIR

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00288Ω

Channel Mode

Enhancement Mode

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

55nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.04mm

Width

5.15mm

Length

6.15mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay power MOSFET designed for efficient switching applications, featuring a Compact design that optimises space utilisation and thermal performance in circuit designs.

N-Channel 80V MOSFET with TrenchFET Gen IV technology for superior performance

Very low R-DS(on) rating reduces power loss during operation

Pulsed drain current capability of 300A supports demanding applications

Enhanced thermal characteristics ensure reliability at elevated temperatures

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