Vishay SiR Type P-Channel MOSFET, 105 A, 20 V Enhancement, 8-Pin SO-8 SIR5211DP-T1-GE3

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Subtotal (1 reel of 3000 units)*

PHP77,028.00

(exc. VAT)

PHP86,271.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 +PHP25.676PHP77,028.00

*price indicative

RS Stock No.:
279-9947
Mfr. Part No.:
SIR5211DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

105A

Maximum Drain Source Voltage Vds

20V

Series

SiR

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0062Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

56.8W

Typical Gate Charge Qg @ Vgs

158nC

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

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