Vishay SISH Type P-Channel MOSFET, 54 A, 30 V Enhancement, 8-Pin 1212-8 SISH103DN-T1-GE3

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

PHP454.72

(exc. VAT)

PHP509.29

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per Unit
Per Pack*
10 - 40PHP45.472PHP454.72
50 - 90PHP33.329PHP333.29
100 - 240PHP29.583PHP295.83
250 - 990PHP28.936PHP289.36
1000 +PHP28.42PHP284.20

*price indicative

Packaging Options:
RS Stock No.:
279-9981
Mfr. Part No.:
SISH103DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

54A

Maximum Drain Source Voltage Vds

30V

Series

SISH

Package Type

1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0089Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

41.6W

Typical Gate Charge Qg @ Vgs

72nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

Related links