Vishay SiR Type P-Channel MOSFET, 105 A, 20 V Enhancement, 8-Pin SO-8 SIR5211DP-T1-GE3

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Subtotal (1 pack of 5 units)*

PHP336.97

(exc. VAT)

PHP377.405

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 45PHP67.394PHP336.97
50 - 95PHP50.588PHP252.94
100 - 245PHP44.876PHP224.38
250 - 995PHP44.036PHP220.18
1000 +PHP43.196PHP215.98

*price indicative

Packaging Options:
RS Stock No.:
279-9949
Mfr. Part No.:
SIR5211DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

105A

Maximum Drain Source Voltage Vds

20V

Series

SiR

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0062Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

56.8W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

158nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

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