Vishay SiR Type N-Channel MOSFET, 42.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5112DP-T1-RE3

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Subtotal (1 pack of 4 units)*

PHP512.74

(exc. VAT)

PHP574.268

(inc. VAT)

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Units
Per Unit
Per Pack*
4 - 56PHP128.185PHP512.74
60 - 96PHP119.263PHP477.05
100 - 236PHP105.65PHP422.60
240 - 996PHP103.77PHP415.08
1000 +PHP101.89PHP407.56

*price indicative

Packaging Options:
RS Stock No.:
279-9946
Mfr. Part No.:
SIR5112DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

42.6A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0149Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16nC

Maximum Power Dissipation Pd

56.8W

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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