Vishay SiR588DP Type N-Channel MOSFET, 59.5 A, 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3
- RS Stock No.:
- 239-5394
- Mfr. Part No.:
- SiR588DP-T1-RE3
- Manufacturer:
- Vishay
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PHP666.40
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PHP746.40
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP66.64 | PHP666.40 |
| 50 - 90 | PHP64.64 | PHP646.40 |
| 100 - 240 | PHP60.763 | PHP607.63 |
| 250 - 990 | PHP55.294 | PHP552.94 |
| 1000 + | PHP48.659 | PHP486.59 |
*price indicative
- RS Stock No.:
- 239-5394
- Mfr. Part No.:
- SiR588DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiR588DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.008Ω | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 59.5W | |
| Typical Gate Charge Qg @ Vgs | 14.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 6.15mm | |
| Width | 5.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8 | ||
Series SiR588DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.008Ω | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 59.5W | ||
Typical Gate Charge Qg @ Vgs 14.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 6.15mm | ||
Width 5.15mm | ||
Automotive Standard No | ||
Vishay SiR588DP Series MOSFET, 80V Drain Source Voltage, 59.5A Continuous Drain Current - SiR588DP-T1-RE3
This n‑channel power MOSFET is designed for high-current switching in surface-mount power electronics. It operates across a wide temperature range and suits demanding thermal environments while providing low conduction losses and efficient gate control for fast-switching applications.
Features and Benefits:
• Very low on‑resistance reduces conduction losses and heat
• High continuous drain current supports heavy-load switching
• 80V drain-source rating enables medium-voltage designs
• Moderate gate charge allows efficient switching control
• Substantial power-dissipation capacity improves thermal margin
• High continuous drain current supports heavy-load switching
• 80V drain-source rating enables medium-voltage designs
• Moderate gate charge allows efficient switching control
• Substantial power-dissipation capacity improves thermal margin
Applications
• Suitable for DC-DC converters in power management
• Ideal for motor-drive inverter stages
• Used with power supplies for server and telecom equipment
• Can be used for battery management and charging systems
• Ideal for motor-drive inverter stages
• Used with power supplies for server and telecom equipment
• Can be used for battery management and charging systems
What package type does it use and why does that matter?
It is supplied in a PowerPAK SO‑8 package which offers a compact surface-mount footprint and improved thermal contact for dissipating heat on densely populated boards.
How does the device behave across temperature extremes?
It is rated to operate from -55 °C up to 150 °C, allowing use in both cold-start conditions and high-temperature enclosures while maintaining specified electrical performance.
What gate-drive constraints should be observed?
The maximum gate-source voltage is 20V so gate-drive circuits must be limited to this value to prevent gate overstress.
What electrical characteristics affect switching efficiency?
Low drain-source resistance together with a typical gate charge of 14.2 nC determine conduction losses and switching energy, influencing overall system efficiency.
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