Vishay SiR588DP Type N-Channel MOSFET, 59.5 A, 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3

RS Stock No.:: 239-5393
Mfr. Part No.:: SiR588DP-T1-RE3
Manufacturer:: Vishay

Vishay SiR588DP Type N-Channel MOSFET, 59.5 A, 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3

This image is representative of the product range

Subtotal (1 reel of 3000 units)*

PHP114,333.00

(exc. VAT)

PHP128,052.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

Shipping from December 14, 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Reel*
3000 +	PHP38.111	PHP114,333.00

*price indicative

RS Stock No.:: 239-5393
Mfr. Part No.:: SiR588DP-T1-RE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	59.5A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PowerPAK SO-8
	Series	SiR588DP
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.008Ω
	Maximum Power Dissipation Pd	59.5W
	Typical Gate Charge Qg @ Vgs	14.2nC
	Forward Voltage Vf	1.1V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Width	5.15mm
	Length	6.15mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 59.5A
	Maximum Drain Source Voltage Vds 80V
	Package Type PowerPAK SO-8
	Series SiR588DP
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.008Ω
	Maximum Power Dissipation Pd 59.5W
	Typical Gate Charge Qg @ Vgs 14.2nC
	Forward Voltage Vf 1.1V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Width 5.15mm
	Length 6.15mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SiR588DP-T1-RE3

Vishay SiR588DP Series MOSFET, 80V Drain Source Voltage, 59.5A Continuous Drain Current - SiR588DP-T1-RE3

This n‑channel power MOSFET is designed for high-current switching in surface-mount power electronics. It operates across a wide temperature range and suits demanding thermal environments while providing low conduction losses and efficient gate control for fast-switching applications.

Features and Benefits:

• Very low on‑resistance reduces conduction losses and heat
• High continuous drain current supports heavy-load switching
• 80V drain-source rating enables medium-voltage designs
• Moderate gate charge allows efficient switching control
• Substantial power-dissipation capacity improves thermal margin

Applications

• Suitable for DC-DC converters in power management
• Ideal for motor-drive inverter stages
• Used with power supplies for server and telecom equipment
• Can be used for battery management and charging systems

What package type does it use and why does that matter?

It is supplied in a PowerPAK SO‑8 package which offers a compact surface-mount footprint and improved thermal contact for dissipating heat on densely populated boards.

How does the device behave across temperature extremes?

It is rated to operate from -55 °C up to 150 °C, allowing use in both cold-start conditions and high-temperature enclosures while maintaining specified electrical performance.

What gate-drive constraints should be observed?

The maximum gate-source voltage is 20V so gate-drive circuits must be limited to this value to prevent gate overstress.

What electrical characteristics affect switching efficiency?

Low drain-source resistance together with a typical gate charge of 14.2 nC determine conduction losses and switching energy, influencing overall system efficiency.