Vishay SiR Type N-Channel MOSFET, 116 A, 80 V, 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3

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Subtotal (1 reel of 3000 units)*

PHP162,666.00

(exc. VAT)

PHP182,187.00

(inc. VAT)

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3000 +PHP54.222PHP162,666.00

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RS Stock No.:
239-5386
Mfr. Part No.:
SiR582DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

116A

Maximum Drain Source Voltage Vds

80V

Series

SiR

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0034Ω

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

92.5W

Typical Gate Charge Qg @ Vgs

33.5nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

6.15mm

Width

5.15 mm

The Vishay TrenchFET N channel power MOSFET has drain current of 116 A. It is used in synchronous rectification, primary side switch, DC/DC converter and motor drive switch.

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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