Vishay SI Type N-Channel MOSFET, 1.9 A, 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3

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Subtotal (1 pack of 25 units)*

PHP498.45

(exc. VAT)

PHP558.275

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP19.938PHP498.45
50 - 75PHP19.525PHP488.13
100 - 225PHP17.75PHP443.75
250 - 975PHP17.378PHP434.45
1000 +PHP17.048PHP426.20

*price indicative

Packaging Options:
RS Stock No.:
279-9891
Mfr. Part No.:
SI1480BDH-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-363

Series

SI

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.212Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.7W

Typical Gate Charge Qg @ Vgs

6nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

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