Infineon IPW Type N-Channel MOSFET, 21 A, 650 V Enhancement, 3-Pin PG-TO-247

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Subtotal (1 unit)*

PHP319.20

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PHP357.50

(inc. VAT)

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Per Unit
1 - 4PHP319.20
5 - 9PHP312.60
10 - 24PHP290.34
25 - 49PHP266.41
50 +PHP245.80

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RS Stock No.:
273-3028
Mfr. Part No.:
IPW65R115CFD7AXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

650V

Series

IPW

Package Type

PG-TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

115mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

114W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

41nC

Maximum Operating Temperature

150°C

Standards/Approvals

AECQ101, RoHS

Automotive Standard

AEC-Q101

The Infineon automotive SJ power MOSFET is in TO-247 package is part of the automotive qualified 650V cool MOS SJ power MOSFET CFD7A product family.

Enabling of higher power density designs

Scalable as designed for use in PFC and DC-DC stage

Granular portfolio available

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