Infineon IPW Type N-Channel MOSFET, 69 A, 650 V, 3-Pin PG-TO-247
- RS Stock No.:
- 258-3910
- Mfr. Part No.:
- IPW65R029CFD7XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 tube of 30 units)*
PHP15,817.77
(exc. VAT)
PHP17,715.90
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 25, 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 30 | PHP527.259 | PHP15,817.77 |
| 60 - 60 | PHP511.441 | PHP15,343.23 |
| 90 + | PHP490.983 | PHP14,729.49 |
*price indicative
- RS Stock No.:
- 258-3910
- Mfr. Part No.:
- IPW65R029CFD7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 69A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO-247 | |
| Series | IPW | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 305W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 69A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO-247 | ||
Series IPW | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 305W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 650V CoolMOS CFD7 super junction MOSFET in TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
650V breakdown voltage
Significantly reduced switching losses compared to competition
Lowest RDS(on) dependency over temperature
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
Related links
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