Infineon IPW Type N-Channel MOSFET, 50 A, 650 V, 3-Pin TO-247 IPW65R041CFD7XKSA1
- RS Stock No.:
- 258-3915
- Mfr. Part No.:
- IPW65R041CFD7XKSA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
PHP468.47
(exc. VAT)
PHP524.69
(inc. VAT)
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In Stock
- 90 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 1 | PHP468.47 |
| 2 - 4 | PHP415.60 |
| 5 - 9 | PHP343.88 |
| 10 - 14 | PHP336.86 |
| 15 + | PHP330.20 |
*price indicative
- RS Stock No.:
- 258-3915
- Mfr. Part No.:
- IPW65R041CFD7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | IPW | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 227W | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series IPW | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 227W | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 650V CoolMOS CFD7 super junction MOSFET TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
Ultrafast body diode and very low Qrr
650V breakdown voltage
Significantly reduced switching losses compared to competition
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
Related links
- Infineon IPW Type N-Channel MOSFET 650 V, 3-Pin TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R115CFD7AXKSA1
- Infineon IPW Type N-Channel MOSFET 650 V, 3-Pin PG-TO-247 IPW65R029CFD7XKSA1
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R099CFD7AXKSA1
- Infineon IPW Type N-Channel MOSFET 600 V, 3-Pin TO-247