STMicroelectronics STP Type N-Channel MOSFET, 12 A, 800 V Enhancement, 3-Pin TO-220 STP80N340K6
- RS Stock No.:
- 269-5164
- Mfr. Part No.:
- STP80N340K6
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 2 units)*
PHP522.71
(exc. VAT)
PHP585.436
(inc. VAT)
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In Stock
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP261.355 | PHP522.71 |
| 10 - 18 | PHP253.515 | PHP507.03 |
| 20 - 28 | PHP243.37 | PHP486.74 |
| 30 - 38 | PHP231.20 | PHP462.40 |
| 40 + | PHP217.325 | PHP434.65 |
*price indicative
- RS Stock No.:
- 269-5164
- Mfr. Part No.:
- STP80N340K6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 340mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 17.8nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 115W | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.4 mm | |
| Length | 28.9mm | |
| Height | 4.6mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 340mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 17.8nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 115W | ||
Maximum Operating Temperature 150°C | ||
Width 10.4 mm | ||
Length 28.9mm | ||
Height 4.6mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET is a very high voltage is designed using the ultimate MDmesh K6 technology result in the best class on resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ultra low gate charge
100 percent avalanche tested
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