STMicroelectronics STP Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220 STP65N045M9
- RS Stock No.:
- 248-9689
- Mfr. Part No.:
- STP65N045M9
- Manufacturer:
- STMicroelectronics
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- RS Stock No.:
- 248-9689
- Mfr. Part No.:
- STP65N045M9
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 245W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | UL | |
| Height | 4.6mm | |
| Length | 28.9mm | |
| Width | 10.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 245W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals UL | ||
Height 4.6mm | ||
Length 28.9mm | ||
Width 10.4 mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel power MOSFET based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS on per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Worldwide best FOM RDS on Qg among silicon based devices
Higher VDSS rating
Higher dv/dt capability
Excellent switching performance
Easy to drive
100 percent avalanche tested
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