STMicroelectronics STP Type N-Channel MOSFET, 12 A, 800 V Enhancement, 3-Pin TO-220 STP80N340K6
- RS Stock No.:
- 269-5163
- Mfr. Part No.:
- STP80N340K6
- Manufacturer:
- STMicroelectronics
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Subtotal (1 tube of 50 units)*
PHP12,352.25
(exc. VAT)
PHP13,834.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 450 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP247.045 | PHP12,352.25 |
| 100 - 100 | PHP239.634 | PHP11,981.70 |
| 150 + | PHP230.048 | PHP11,502.40 |
*price indicative
- RS Stock No.:
- 269-5163
- Mfr. Part No.:
- STP80N340K6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | STP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 340mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17.8nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 115W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 10.4 mm | |
| Height | 4.6mm | |
| Length | 28.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series STP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 340mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17.8nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 115W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 10.4 mm | ||
Height 4.6mm | ||
Length 28.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET is a very high voltage is designed using the ultimate MDmesh K6 technology result in the best class on resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ultra low gate charge
100 percent avalanche tested
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