STMicroelectronics STP Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220 STP60N043DM9
- RS Stock No.:
- 248-9687
- Mfr. Part No.:
- STP60N043DM9
- Manufacturer:
- STMicroelectronics
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- RS Stock No.:
- 248-9687
- Mfr. Part No.:
- STP60N043DM9
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 245W | |
| Maximum Operating Temperature | 175°C | |
| Length | 28.9mm | |
| Standards/Approvals | UL | |
| Width | 10.4 mm | |
| Height | 4.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 245W | ||
Maximum Operating Temperature 175°C | ||
Length 28.9mm | ||
Standards/Approvals UL | ||
Width 10.4 mm | ||
Height 4.6mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel power MOSFET based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS on per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The fast recovery diode featuring very low recovery charge, time and RDS on makes this fast switching super junction power MOSFET tailored for the most demanding high efficiency bridge topologies and ZVS phase shift converters.
Fast recovery body diode
Worldwide best RDS on per area among silicon based fast recovery devices
Low gate charge, input capacitance and resistance
100 percent avalanche tested
Extremely dv/dt ruggedness
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