Infineon HEXFET Type N-Channel MOSFET, 6.9 A, 100 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 4000 units)*

PHP230,192.00

(exc. VAT)

PHP257,816.00

(inc. VAT)

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Units
Per Unit
Per Reel*
4000 +PHP57.548PHP230,192.00

*price indicative

RS Stock No.:
262-6737
Mfr. Part No.:
IRF7473TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.9A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

26mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

61nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

4 mm

Standards/Approvals

RoHS

Length

5mm

Height

1.75mm

Automotive Standard

No

The Infineon power MOSFET has benefits such as low gate drive current due to improved gate charge characteristic, improved avalanche ruggedness and dynamic dv/dt and fully characterized avalanche voltage and current.

Ultra low on-resistance

High speed switching

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