Infineon HEXFET Type N-Channel MOSFET & Diode, 5.4 A, 100 V Enhancement, 8-Pin SO-8

RS Stock No.:: 220-7478
Mfr. Part No.:: IRF7490TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET & Diode, 5.4 A, 100 V Enhancement, 8-Pin SO-8

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 4000 units)*

PHP95,256.00

(exc. VAT)

PHP106,688.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

Plus 8,000 unit(s) shipping from December 26, 2025

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Units	Per Unit	Per Reel*
4000 - 4000	PHP23.814	PHP95,256.00
8000 - 8000	PHP23.10	PHP92,400.00
12000 +	PHP22.407	PHP89,628.00

*price indicative

RS Stock No.:: 220-7478
Mfr. Part No.:: IRF7490TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5.4A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	39mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	37nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	5mm
	Width	4 mm
	Standards/Approvals	No
	Height	1.75mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 5.4A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 39mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 37nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 5mm
	Width 4 mm
	Standards/Approvals No
	Height 1.75mm
	Automotive Standard No

Datasheet - IRF7490TRPBF

The Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100KHz

Industry standard surface-mount power package

Capable of being wave-soldered

Infineon HEXFET Type N-Channel MOSFET & Diode, 5.4 A, 100 V Enhancement, 8-Pin SO-8

FREE delivery for orders over ₱3,000.00

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