Infineon HEXFET Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin SO-8
- RS Stock No.:
- 273-2806
- Mfr. Part No.:
- IRF7351TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP335.16
(exc. VAT)
PHP375.38
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 25 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP67.032 | PHP335.16 |
| 50 - 95 | PHP61.064 | PHP305.32 |
| 100 - 495 | PHP55.978 | PHP279.89 |
| 500 - 1995 | PHP47.906 | PHP239.53 |
| 2000 + | PHP47.03 | PHP235.15 |
*price indicative
- RS Stock No.:
- 273-2806
- Mfr. Part No.:
- IRF7351TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
- COO (Country of Origin):
- PH
The Infineon MOSFET is a 60V N Channel HEXFET Power MOSFET. This MOSFET is used for low power motor drive systems and for isolated DC to DC converters.
Ultra low gate impedance
20V VGS maximum gate rating
Fully characterized avalanche voltage and current
Related links
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 IRF7351TRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET & Diode 100 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8