Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 150 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 4000 units)*

PHP120,840.00

(exc. VAT)

PHP135,360.00

(inc. VAT)

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Units
Per Unit
Per Reel*
4000 +PHP30.21PHP120,840.00

*price indicative

RS Stock No.:
262-6732
Mfr. Part No.:
IRF7451TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

150V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

28nC

Maximum Operating Temperature

150°C

Height

1.75mm

Length

5mm

Width

4 mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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