Infineon IPD Type P-Channel MOSFET, -85 A, -40 V Enhancement TO-252 IPD85P04P407ATMA2
- RS Stock No.:
- 258-3867
- Mfr. Part No.:
- IPD85P04P407ATMA2
- Manufacturer:
- Infineon
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PHP214.12
(exc. VAT)
PHP239.82
(inc. VAT)
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In Stock
- 4,572 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP107.06 | PHP214.12 |
| 10 - 98 | PHP103.85 | PHP207.70 |
| 100 - 248 | PHP97.625 | PHP195.25 |
| 250 - 498 | PHP88.845 | PHP177.69 |
| 500 + | PHP78.185 | PHP156.37 |
*price indicative
- RS Stock No.:
- 258-3867
- Mfr. Part No.:
- IPD85P04P407ATMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -85A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 7.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1V | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 88W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, DIN IEC 68-1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -85A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 7.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1V | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 88W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, DIN IEC 68-1 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Related links
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
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- Infineon IPD Type P-Channel MOSFET -30 V Enhancement PG-TO-252
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement, 3-Pin PG-TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252