Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263 IPB80P04P4L08ATMA2

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Subtotal (1 pack of 2 units)*

PHP228.89

(exc. VAT)

PHP256.356

(inc. VAT)

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Last RS stock
  • Final 910 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
2 - 8PHP114.445PHP228.89
10 - 98PHP111.01PHP222.02
100 - 248PHP104.35PHP208.70
250 - 498PHP94.96PHP189.92
500 +PHP83.57PHP167.14

*price indicative

Packaging Options:
RS Stock No.:
258-3823
Mfr. Part No.:
IPB80P04P4L08ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Maximum Drain Source Resistance Rds

40.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.

Simple interface drive circuit

World's lowest RDSon at 40V

Highest current capability

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