Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263 IPB80P04P405ATMA2

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Subtotal (1 pack of 2 units)*

PHP320.68

(exc. VAT)

PHP359.16

(inc. VAT)

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  • 908 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
2 - 8PHP160.34PHP320.68
10 - 98PHP155.53PHP311.06
100 - 248PHP146.20PHP292.40
250 - 498PHP133.045PHP266.09
500 +PHP117.08PHP234.16

*price indicative

Packaging Options:
RS Stock No.:
258-3813
Mfr. Part No.:
IPB80P04P405ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Maximum Drain Source Resistance Rds

40.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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