Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263 IPB80P04P407ATMA2

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Subtotal (1 pack of 2 units)*

PHP311.25

(exc. VAT)

PHP348.60

(inc. VAT)

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In Stock
  • 970 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
2 - 8PHP155.625PHP311.25
10 - 98PHP150.955PHP301.91
100 - 248PHP141.90PHP283.80
250 - 498PHP129.13PHP258.26
500 +PHP113.635PHP227.27

*price indicative

Packaging Options:
RS Stock No.:
258-3815
Mfr. Part No.:
IPB80P04P407ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Maximum Drain Source Resistance Rds

40.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.

Green package (RoHS compliant)

100% Avalanche tested

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