Infineon HEXFET Type N-Channel MOSFET, -9.2 A, -30 V, 8-Pin SO-8 IRF9393TRPBF

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Subtotal (1 pack of 10 units)*

PHP274.40

(exc. VAT)

PHP307.30

(inc. VAT)

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  • 7,980 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
10 - 40PHP27.44PHP274.40
50 - 90PHP26.617PHP266.17
100 - 490PHP25.02PHP250.20
500 - 1990PHP22.769PHP227.69
2000 +PHP20.038PHP200.38

*price indicative

Packaging Options:
RS Stock No.:
257-9338
Mfr. Part No.:
IRF9393TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

-9.2A

Maximum Drain Source Voltage Vds

-30V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

32.5mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

14nC

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the -30V p channel strong IRFET power mosfet in a SO 8 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Silicon optimized for applications switching below 100 kHz


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