Infineon HEXFET Type N-Channel MOSFET, 280 A, 30 V, 8-Pin PQFN IRFH8303TRPBF
- RS Stock No.:
- 258-3972
- Mfr. Part No.:
- IRFH8303TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
PHP297.50
(exc. VAT)
PHP333.20
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Last RS stock
- Final 424 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP148.75 | PHP297.50 |
| 10 - 98 | PHP144.285 | PHP288.57 |
| 100 - 248 | PHP135.625 | PHP271.25 |
| 250 - 498 | PHP123.41 | PHP246.82 |
| 500 + | PHP108.59 | PHP217.18 |
*price indicative
- RS Stock No.:
- 258-3972
- Mfr. Part No.:
- IRFH8303TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 280A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 156W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Width | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 280A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 156W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Width 5mm | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Softer body-diode compared to previous silicon generation
Wide portfolio available
Increased power density
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