Infineon HEXFET Type N-Channel MOSFET, 46 A, 100 V, 8-Pin PQFN IRFH5053TRPBF
- RS Stock No.:
- 258-3970
- Mfr. Part No.:
- IRFH5053TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP244.61
(exc. VAT)
PHP273.964
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 5,468 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP122.305 | PHP244.61 |
| 10 - 98 | PHP118.635 | PHP237.27 |
| 100 - 248 | PHP111.52 | PHP223.04 |
| 250 - 498 | PHP101.48 | PHP202.96 |
| 500 + | PHP89.31 | PHP178.62 |
*price indicative
- RS Stock No.:
- 258-3970
- Mfr. Part No.:
- IRFH5053TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.1W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard surface-mount package
industry standard qualification level
Standard pinout allows for drop-in replacement
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 250 V TO-220 IRFB4229PBF
- Infineon HEXFET Type N-Channel MOSFET 250 V TO-220
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN IRFH5301TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN IRFH5302TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin PQFN IRFH8303TRPBF